ALEXANDRIA, Va., April 15 -- United States Patent no. 12,600,907, issued on April 14, was assigned to NATIONAL TSING HUA UNIVERSITY (Hsinchu City, Taiwan).

"Semiconductor quantum dot structure and method for making the same" was invented by Chang-Wei Yeh (Taoyuan, Taiwan), Hsueh-Shih Chen (Hsinchu, Taiwan) and Cheng-Yang Chen (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor quantum dot structure includes a core and a shell. The core includes a seed crystal made of a first compound M1C1, a core layer, and a barrier layer grown in such order. The seed crystal has first regions that are inactive with oxygen, and second regions that are easily reactive with oxygen. The core laye...