US Patent Issued to National Taiwan University of Science and Technology on Feb. 3 for "Atomic layer deposition method" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,540,393, issued on Feb. 3, was assigned to National Taiwan University of Science and Technology (Taipei, Taiwan).

"Atomic layer deposition method" was invented by Bing-Joe Hwang (Taipei, Taiwan), Sheng-Chiang Yang (Taipei, Taiwan), Chun-Huang Xu (Taipei, Taiwan), Wei-Nien Su (Taipei, Taiwan), Ping-Chun Tsai (Taipei, Taiwan) and Kuan-Lin Chu (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A deposition method, comprising the steps of exposing a carrier to moisture, so that a hydroxy group can be distributed on the surface of the carrier, and adding a liquid precursor to the hydroxy group to perform an alcohol condensation reaction to form a ...