US Patent Issued to NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY on Sept. 15 for "Heteroelement-containing vanadium sulfide" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,492, issued on Sept. 15, was assigned to NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Tokyo).

"Heteroelement-containing vanadium sulfide" was invented by Masahiro Mori (Ikeda, Japan), Shingo Tanaka (Ikeda, Japan), Tomonari Takeuchi (Ikeda, Japan) and Hikari Sakaebe (Ikeda, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A foreign element-containing vanadium sulfide contains, as constituent elements, vanadium, sulfur, and a foreign element, wherein the compositional ratio of the foreign element to the vanadium (M1/V) is in the range of 0.05 to 1.5 in terms of molar ratio; the compositional ratio of the sulfur to the vanadiu...