US Patent Issued to NANYA TECHNOLOGY on Sept. 2 for "Semiconductor device including through-insulator via structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,933, issued on Sept. 2, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device including through-insulator via structure" was invented by Hsih-Yang Chiu (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes an interposer, a conductive via, an insulation layer, and a first electronic component. The interposer has a first surface and a second surface opposite to the first surface. The conductive via extends between the first surface and the second surface of the interposer. The insulation layer separates t...