US Patent Issued to NANYA TECHNOLOGY on Sept. 2 for "Method of forming conductive layer of semiconductor device" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,860, issued on Sept. 2, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method of forming conductive layer of semiconductor device" was invented by Yu Shu Lin (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a conductive layer of a semiconductor device is described. The method includes forming a hard mask layer on a metal layer overlying a substrate, in which the metal layer includes tungsten. The method further includes patterning the hard mask layer until portions of the metal layer are exposed from the patterned hard mask layer. The method further includes performing a plasma process to the metal l...