US Patent Issued to NANYA TECHNOLOGY on Sept. 15 for "Method for preparing air gap between bit line stricture and capacitor contact" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,740,042, issued on Sept. 15, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Method for preparing air gap between bit line stricture and capacitor contact" was invented by Cheng-Hsiang Fan (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device with an air gap between a bit line structure and capacitor contact and also provides a method for preparing the same. The method includes defining an active region in a substrate, forming a bit line structure and capacitor contact disposed over and electrically connected to the active region, forming a first spacer structure s...