US Patent Issued to NANYA TECHNOLOGY on Sept. 1 for "Semiconductor structure including polysilicon as bottom layer of bit line structure and method of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,151, issued on Sept. 1, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor structure including polysilicon as bottom layer of bit line structure and method of manufacturing the same" was invented by Mao-Ying Wang (New Taipei City, Taiwan) and Yu-Ting Lin (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a substrate, including a plurality of fin structures; a dielectric layer, disposed over adjacent fin structures, wherein a top surface of the dielectric layer is a substantially planar surface; a bit line structure, disposed over the substrate and between adjacent...