US Patent Issued to NANYA TECHNOLOGY on Sept. 1 for "Semiconductor device structure with backside pick-up region and method of manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,211, issued on Sept. 1, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device structure with backside pick-up region and method of manufacturing the same" was invented by Hsih-Yang Chiu (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure and method of manufacturing the same are provided. The semiconductor device structure includes a substrate, a first well region, a source/drain (S/D) feature, and a pick-up region. The substrate has a first surface and a second surface opposite to the first surface. The first well region abuts the second surface of the substrate and ...