US Patent Issued to NANYA TECHNOLOGY on Oct. 27 for "Semiconductor device with protection layer and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,919, issued on Oct. 27, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device with protection layer and method for fabricating the same" was invented by Chun-Heng Wu (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a first outer filling layer including a first concave portion inwardly positioned in the substrate and including a U-shaped cross-sectional profile, and a first flat portion positioned on the substrate and connecting to the first...