US Patent Issued to NANYA TECHNOLOGY on Nov. 25 for "Method of manufacturing semiconductor structure including nitrogen treatment and semiconductor structure thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,748, issued on Nov. 25, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method of manufacturing semiconductor structure including nitrogen treatment and semiconductor structure thereof" was invented by Ying-Cheng Chuang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a semiconductor structure and a manufacturing method of the semiconductor structure. The semiconductor structure includes a substrate, a residual nitrogen, an oxide layer, a plurality of first contacts, and a plurality of second contacts. The substrate includes a plurality of pillars in an array region of the substrate, wher...