US Patent Issued to NANYA TECHNOLOGY on Nov. 18 for "Semiconductor structure with anti-back-sputter layer" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,116, issued on Nov. 18, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor structure with anti-back-sputter layer" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor structure and a method for fabricating the semiconductor device. The semiconductor structure includes a substrate; a conductive feature positioned on the substrate; an anti-back sputtering layer positioned on the conductive feature; and a first hard mask structure positioned on the anti-back sputtering layer. The anti-back sputtering layer has etching selectivity to the f...