US Patent Issued to NANYA TECHNOLOGY on May 26 for "Memory cell with improved insulating structure and method of manufacturing thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,774, issued on May 26, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Memory cell with improved insulating structure and method of manufacturing thereof" was invented by Chung-Lin Huang (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a memory device and a method of manufacturing the same. The memory device includes a substrate, a first gate electrode arranged within the substrate, a second gate electrode arranged within the substrate and over the first gate electrode, and an electrical insulating structure separating the substrate, the first gate electrode and the second gate el...