US Patent Issued to NANYA TECHNOLOGY on May 12 for "Semiconductor structure and method of overlay measurement of semiconductor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,621, issued on May 12, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor structure and method of overlay measurement of semiconductor structure" was invented by Chan Hen Yang (Taipei City, Taiwan) and Yun Chen Wu (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of overlay measurement of a semiconductor structure includes a number of operations. A semiconductor structure with a pre-layer and a current layer over the pre-layer is provided, wherein the pre-layer includes a first overlay mark with a first grating group and a second grating group, and the current layer includes a second overlay m...