US Patent Issued to NANYA TECHNOLOGY on March 31 for "Method of fabricating void-free conductive feature of semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,667, issued on March 31, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Method of fabricating void-free conductive feature of semiconductor device" was invented by Cheng-Yan Ji (New Taipei City, Taiwan), Chu-Hsiang Hsu (New Taipei City, Taiwan) and Jing Hsu (Kaohsiung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a method of fabricating a conductive feature. The method of fabricating the conductive feature includes steps of depositing an insulative layer on a substrate, forming a trench in the insulative layer, performing a cyclic process comprising a sequence of a deposition step a...