US Patent Issued to NANYA TECHNOLOGY on March 31 for "Method for manufacturing memory device having word line surrounding gate structure" (Taiwanese Inventor)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,444, issued on March 31, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Method for manufacturing memory device having word line surrounding gate structure" was invented by Szu-Yao Chang (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a memory device having a word line (WL) surrounding a gate structure and a manufacturing method of the memory device. The memory device includes a first dielectric surrounding a capacitor; a second dielectric disposed over the first dielectric and the capacitor; a word line embedded in the second dielectric; and a gate structure disposed over ...