US Patent Issued to NANYA TECHNOLOGY on March 31 for "Memory device having improved P-N junction and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,441, issued on March 31, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Memory device having improved P-N junction and manufacturing method thereof" was invented by Hsih-Yang Chiu (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a memory device including a semiconductor substrate having a first surface and defined with an active area under the first surface; a gate structure adjacent to the active area and indented into the semiconductor substrate from the first surface; a doped member extending into the semiconductor substrate and surrounded by the active area; a conductive l...