US Patent Issued to NANYA TECHNOLOGY on March 3 for "Memory control circuit and control method for controlling memory device" (Taiwanese Inventor)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,566,717, issued on March 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Memory control circuit and control method for controlling memory device" was invented by William Wu Shen (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory control circuit and a control method of the memory device are provided. The control logic circuit includes a reset circuit, a counter and a comparator. The reset circuit resets a count value corresponding to an accessed memory cell row among memory cell rows of a memory array to a predetermined value. The counter sets the count value to a random value when the count value is equal ...