US Patent Issued to NANYA TECHNOLOGY on March 24 for "Semiconductor memory device manufacturing method" (Taiwanese Inventor)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,476, issued on March 24, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor memory device manufacturing method" was invented by Chih-Ching Lin (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device manufacturing method includes the following steps. A bit line structure is formed in a memory array area of a substrate. A gate structure is formed in a periphery area of the substrate. A dielectric layer is formed over the bit line structure and the gate structure. A lower hard mask layer is formed over the dielectric layer. An etch process diagnostic signal layer is formed ove...