US Patent Issued to NANYA TECHNOLOGY on March 17 for "Semiconductor device with programmable insulating layer and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,670, issued on March 17, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device with programmable insulating layer and method for fabricating the same" was invented by Ying-Cheng Chuang (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a valley inwardly positioned on a top surface of the substrate; a programmable insulating layer conformally positioned on the valley and including a V-shaped cross-sectional profile; and a top electrode positi...