US Patent Issued to NANYA TECHNOLOGY on June 23 for "Semiconductor structure using lining layer to prevent electrical connection between contacts and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,605, issued on June 23, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor structure using lining layer to prevent electrical connection between contacts and manufacturing method thereof" was invented by Yen-Ho Chu (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments of the present disclosure provide a semiconductor structure including a dielectric layer stack, an isolation structure, a lining layer and a contact. The isolation structure is in contact with a sidewall of the dielectric layer stack, and the sidewall of the dielectric layer stack and a sidewall of the isolation structure de...