US Patent Issued to NANYA TECHNOLOGY on June 16 for "Method of manufacturing semiconductor device for reducing defect in array region" (Taiwanese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,538, issued on June 16, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Method of manufacturing semiconductor device for reducing defect in array region" was invented by Ying-Cheng Chuang (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing the same is provided. The method includes providing a substrate. The method also includes forming a target layer over the substrate. The method further includes forming a patterned mask structure over the target layer. In addition, the method includes forming an etching stop layer over the patterned mask structure. The method also includes forming an un...