US Patent Issued to NANYA TECHNOLOGY on Jan. 13 for "Semiconductor structure and method of manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,984, issued on Jan. 13, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor structure and method of manufacturing the same" was invented by Szu-Yao Chang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method of manufacturing a semiconductor structure are provided. The semiconductor structure includes a substrate, an upper structure, a vertical transistor an electrical pad. The upper structure is disposed on the substrate and defines a hole. The vertical transistor is disposed in the hole. The electrical pad is disposed in the hole and on the vertical transistor. A top surfac...