US Patent Issued to NANYA TECHNOLOGY on Dec. 2 for "Semiconductor structure having air gap dielectric and method of preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,015, issued on Dec. 2, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor structure having air gap dielectric and method of preparing the same" was invented by Chun-Chi Lai (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure including a base layer, a first conductive line disposed on the base layer, a first dielectric pillar disposed on the base layer, a second dielectric pillar disposed on the base layer, a first liner, and a second liner. The first conductive line is disposed between the first dielectric pillar and the second dielectric pillar. The first ...