US Patent Issued to NANYA TECHNOLOGY on Dec. 2 for "Method for fabricating semiconductor device with multi-carbon-concentration dielectrics" (Taiwanese Inventor)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,014, issued on Dec. 2, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for fabricating semiconductor device with multi-carbon-concentration dielectrics" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses provides a method for fabricating a semiconductor device. The method includes forming a first insulating layer on a substrate; forming a bottom contact in the first insulating layer; sequentially forming a bottom dielectric layer, a lower middle dielectric layer, a higher middle dielectric layer, and a top dielectric layer on the first insulating layer; p...