US Patent Issued to NANYA TECHNOLOGY on Dec. 2 for "Memory device and control method for controlling memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,108, issued on Dec. 2, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Memory device and control method for controlling memory device" was invented by William Wu Shen (Taipei, Taiwan), Hao-Huan Hsu (Taoyuan, Taiwan) and Tien Te Huang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a control method of the memory device are provided. The memory device includes a memory array and a control logic circuit. The memory array includes a plurality of memory cell rows. The control logic circuit perform an access on the memory array. The control logic circuit counts a number of the access performed on the mem...