US Patent Issued to NANYA TECHNOLOGY on Dec. 16 for "Semiconductor device with capping layer" (Taiwanese Inventor)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,686, issued on Dec. 16, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with capping layer" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a capping mask layer positioned on the substrate; a first gate insulating layer positioned along the capping mask layer, inwardly positioned in the substrate, and including a U-shaped cross-sectional profile; a first work function layer positioned on the first gate insulating l...