US Patent Issued to NANYA TECHNOLOGY on Aug. 11 for "Memory device and fabricating method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,978, issued on Aug. 11, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Memory device and fabricating method thereof" was invented by Hui Tzu Chan (New Taipei City, Taiwan) and Ying-Cheng Chuang (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a substrate, an oxide layer, and a plurality of spacers. The substrate includes a silicon layer, a nitride layer, and a plurality of isolation trenches. The nitride layer overlies the silicon layer. The plurality of isolation trenches penetrates through the nitride layer and a portion of the silicon layer. The oxide layer fills the plurality of is...