US Patent Issued to NANYA TECHNOLOGY on April 21 for "Memory device and internal voltage measuring method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,177, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Memory device and internal voltage measuring method thereof" was invented by Chih-Jen Chen (New Taipei City, Taiwan) and Ting-Shuo Hsu (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and an internal voltage measuring method thereof are provided. Output pads of a master memory chip and a slave memory chip are coupled. When one of a switching circuit of the master memory chip and a switching circuit of the slave memory chip is turned on, the other of the switching circuit of the master memory chip and the switching circu...