US Patent Issued to NANYA TECHNOLOGY on April 21 for "Contact structure, semiconductor device comprising the same, and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,804, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Contact structure, semiconductor device comprising the same, and method for fabricating the same" was invented by Jhen-Yu Tsai (Kaohsiung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a contact structure, a semiconductor device including the contact structure, and a method for fabricating the semiconductor device. The contact structure includes a body portion; and an extending portion downwardly extending from the body portion and including a groove. The groove is recessed from a bottom surface of the extending...