ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,717, issued on April 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).
"Semiconductor structure and method of manufacturing the same" was invented by Min-Chung Cheng (Taoyuan City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor structure is provided by embodiments of this disclosure, and the method includes the following steps. An insulating area and an active area are formed in a substrate. A first word line trench is formed in the active area. A first dielectric layer is deposited in the first word line trench and on the active area and the insulating area. A second word line tr...