ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,461, issued on April 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).
"Dynamic random access memory" was invented by Chiang-Lin Shih (New Taipei City, Taiwan) and Yu-Ting Lin (New Taipei City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A dynamic random access memory includes an array region, a bottom capacitor array located in the array region, and a top capacitor array located in the array region and located on the bottom capacitor array. The bottom capacitor array is single-sided capacitor array. The top capacitor is a double-sided capacitor array."
The patent was filed on Aug. 21, 2022, under Application No. 17/8...