US Patent Issued to Nano and Advanced Materials Institute on May 20 for "Low surface roughness thermal interface device based on graphite with branched siloxane having high through-plane thermal conductivity" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,304,180, issued on May 20, was assigned to Nano and Advanced Materials Institute Ltd. (Hong Kong, Hong Kong).

"Low surface roughness thermal interface device based on graphite with branched siloxane having high through-plane thermal conductivity" was invented by Jinliang Zhao (Hong Kong, Hong Kong), Yijun Liao (Hong Kong, Hong Kong), ChiHo Kwok (Hong Kong, Hong Kong) and Chenmin Liu (Hong Kong, Hong Kong).

According to the abstract* released by the U.S. Patent & Trademark Office: "An anisotropic thermal interface device including plural aligned thermally anisotropic conductive composite layers. Each layer has a first thermal conductivity in a first direction and a second, larger ther...