US Patent Issued to Nano and Advanced Materials Institute on March 31 for "Self-densifying interconnection between a high-temperature semiconductor device selected from GaN or SiC and a substrate" (Chinese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,713, issued on March 31, was assigned to Nano and Advanced Materials Institute Ltd. (Hong Kong, Hong Kong).

"Self-densifying interconnection between a high-temperature semiconductor device selected from GaN or SiC and a substrate" was invented by Yuechen Wang (Hong Kong, Hong Kong), Tao Xu (Hong Kong, Hong Kong) and Li Fu (Hong Kong, Hong Kong).

According to the abstract* released by the U.S. Patent & Trademark Office: "A self-densifying interconnection is formed between a high-temperature semiconductor device selected from a GaN or SiC-based device and a substrate. The interconnection includes a matrix of micron-sized silver particles in an amount from approximately 10 to 60 we...