US Patent Issued to NAMI MOS on July 7 for "SiC MOSFETs with saturation current pinching structures" (Chinese, Taiwanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,450, issued on July 7, was assigned to NAMI MOS Co. LTD. (New Taipei City, Taiwan).

"SiC MOSFETs with saturation current pinching structures" was invented by Fu-Yuan Hsieh (New Taipei City, Taiwan) and Lin Xu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "An improved silicon carbide (SiC) super junction (SJ) MOSFET having at least two buried P-shield (BPS) regions facing each other for gate oxide electric-field and saturation current reductions is disclosed. The two BPS regions are spaced apart from a body region and formed either adjoining sidewalls or below a bottom of a P column region. Moreover, a saturation current pitching (SCP) struc...