US Patent Issued to Murata Manufacturing on July 7 for "FET fin and vertical nanosheet formation using porous semiconductors" (California, Texas Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,432, issued on July 7, was assigned to Murata Manufacturing Co. Ltd. (Kyoto, Japan).

"FET fin and vertical nanosheet formation using porous semiconductors" was invented by Kouassi Sebastien Kouassi (San Diego), Sinan Goktepeli (Austin, Texas) and Panglijen Candra (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures and corresponding methods of fabrication for ICs having fins and/or vertical nanosheets made by forming and etching a porous semiconductor (Pi-Semi) from a crystalline semiconductor. Embodiments include FinFETs and "gate-all-around" FETs. Such FET structures may be made by patterning an IC die to outline one or more regions...