US Patent Issued to Monolithic Power Systems on June 23 for "Semiconductor device with integrated junction field effect transistor and associated manufacturing method" (California Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,696, issued on June 23, was assigned to Monolithic Power Systems Inc. (Kirkland, Wash.).

"Semiconductor device with integrated junction field effect transistor and associated manufacturing method" was invented by Vipindas Pala (San Jose, Calif.) and Sauvik Chowdhury (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first source region, a first sidewall body region, a gate region, a second source region and a link region formed in a substrate of a first conductivity type. The first source region and the second source region may be of the first conductivity type while the first sidewall body region and ...