US Patent Issued to Monolithic Power Systems on Jan. 13 for "Laser induced semiconductor wafer patterning" (American, Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,454, issued on Jan. 13, was assigned to Monolithic Power Systems Inc. (Kirkland, Wash.).

"Laser induced semiconductor wafer patterning" was invented by Sudarsan Uppili (Portland, Ore.), Vipindas Pala (San Jose, Calif.), Carl Johnson (Fairview, Texas), Chan Wu (Suzhou, China) and John Trepl II (Dana Point, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor wafer processing method, having: ablating a back side of a semiconductor wafer with a laser ablation process; and etching the back side of the semiconductor wafer with an etching process; wherein the laser ablation process forms a pattern in the back side of the semiconductor waf...