ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,778, issued on July 14, was assigned to Monolithic 3D Inc. (Allen, Texas).

"3D memory semiconductor devices and structures with memory cells" was invented by Zvi Or-Bach (Haifa, Israel), Jin-Woo Han (San Jose, Calif.) and Eli Lusky (Ramat-Gan, Israel).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D memory device including: a first structure including a plurality of memory cells, where each memory cell of the plurality of memory cells includes at least one memory transistor, where each of the at least one memory transistor includes a source, a drain, and a channel, where the memory cell includes at least one charge trap structure, and where the at...