US Patent Issued to Monolithic 3D on Feb. 24 for "3D semiconductor device and structure with memory cells and multiple metal layers" (American, Israeli Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,564,006, issued on Feb. 24, was assigned to Monolithic 3D Inc. (Allen, Texas).

"3D semiconductor device and structure with memory cells and multiple metal layers" was invented by Zvi Or-Bach (Haifa, Israel), Brian Cronquist (Klamath Falls, Ore.) and Deepak C. Sekar (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D semiconductor device including: a first level including a first single crystal layer and first transistors, which each include a single crystal channel; a first metal layer with an overlaying second metal layer; a second level including second transistors, overlaying the first level; a third level including third transisto...