US Patent Issued to Mitsubishi Electric Research Laboratories on Aug. 25 for "High electron mobility transistors with low specific on-resistance" (Massachusetts Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,791, issued on Aug. 25, was assigned to Mitsubishi Electric Research Laboratories Inc. (Cambridge, Mass.).

"High electron mobility transistors with low specific on-resistance" was invented by Koon Hoo Teo (Lexington, Mass.) and Nadim Chowdhury (Cambridge, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor comprises a layered semiconductor structure electrically connected to a plurality of electrodes forming a source, a gate, and a drain of the transistor. The layered semiconductor structure includes a channel layer having a shape formed by a set of fins, and a barrier layer on the channel layer such that the barrier layer coats the fi...