ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,539, issued on Sept. 8, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Semiconductor device and power converter" was invented by Kohei Ebihara (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a field insulating film formed on an epitaxial layer, a front surface electrode riding onto an inner peripheral end of the field insulating film, and an outer peripheral electrode riding onto an outer peripheral end of the field insulating film. To a surface portion of the epitaxial layer, connected is the front surface electrode, and in the surface portion of the epitaxial layer, formed is a well region extending up to...