US Patent Issued to Mitsubishi Electric on Sept. 2 for "Semiconductor device including first and second semi-insulating layers" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,894, issued on Sept. 2, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device including first and second semi-insulating layers" was invented by Ayanori Gatto (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor substrate includes: an active region; and a termination region surrounding the active region, and the semiconductor device includes: a first main electrode provided on the active region; a second main electrode provided on an opposite side of the first main electrode; an impurity region provided on an outermost periphery of the termination region; a first insulating film provided on an outer end edge part;...