ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,778, issued on Oct. 6, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Akitoshi Shirao (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method of manufacturing a semiconductor device capable of increasing reliability. A method of manufacturing a semiconductor device includes steps of: filling a cavity and at least a part of a sealing material storage part with a sealing material by injecting the sealing material from a first gate of a mold, the mold including the cavity in which an electrical circuit is disposed, the first gate and a second gate provided...