US Patent Issued to MITSUBISHI ELECTRIC on Oct. 27 for "Nitride semiconductor device and method for manufacturing nitride semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,694, issued on Oct. 27, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Nitride semiconductor device and method for manufacturing nitride semiconductor device" was invented by Ken Imamura (Tokyo), Shuichi Hiza (Tokyo) and Kunihiko Nishimura (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "It is an object of the present disclosure to impart desired high frequency characteristics to a nitride semiconductor device including diamond as a substrate at a low cost. In the nitride semiconductor device according to the present disclosure, a via hole extends from a first main surface of a diamond layer through the diamond layer, an intermediate layer...