ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,966, issued on May 13, was assigned to Mitsubishi Electric Corp. (Tokyo).
"Semiconductor laser device" was invented by Akitsugu Niwa (Tokyo) and Kenichi Abe (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "The semiconductor laser device comprises a laser part, a waveguide for propagating laser light emitted by the laser part, and a photodetector for detecting the laser light which are formed on the same semiconductor substrate. The photodetector includes a p-type contact layer which is formed above the side of the waveguide on the side opposite to the semiconductor substrate and is connected to an anode electrode, an n-type contact layer connec...