ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,539, issued on March 24, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).
"Semiconductor device, method for manufacturing same, and electric power converter" was invented by Yuji Sato (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "In a semiconductor device, a first structure including a first uneven unit and a second structure covering the first structure and including a second uneven unit are formed in a bonding region defined in a semiconductor substrate. Metal wiring is joined to the second uneven unit in the second structure. A depth of a recess in the second uneven unit is shallower than a depth of a recess in the first uneven unit. A...