US Patent Issued to Mitsubishi Electric on March 17 for "Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor chip" (Japanese Inventor)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,887, issued on March 17, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor chip" was invented by Chihiro Tadokoro (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method of manufacturing a silicon carbide semiconductor device that suppresses the crawling up of a bonding material to the side surfaces of a chip, thereby suppressing a decrease in productivity. In the method of manufacturing the silicon carbide semiconductor device, the method includes, preparing a semiconductor wafer, forming semiconductor elements on the semiconductor w...