ALEXANDRIA, Va., June 9 -- United States Patent no. 12,653,041, issued on June 9, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).
"Power semiconductor apparatus and power conversion apparatus" was invented by Tatsunori Yanagimoto (Tokyo), Tsuyoshi Uraji (Tokyo) and Yasuhiro Sakai (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor apparatus includes an insulating substrate, a power semiconductor device, and an electrode terminal. The insulating substrate includes a conductive circuit pattern. The electrode terminal is ultrasonically bonded to the conductive circuit pattern. The electrode terminal includes a strip conductor and a conductive film. The conductive film is solid-phase d...