US Patent Issued to MITSUBISHI ELECTRIC on June 30 for "Silicon carbide semiconductor device and power conversion device using silicon carbide semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,339, issued on June 30, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).

"Silicon carbide semiconductor device and power conversion device using silicon carbide semiconductor device" was invented by Shiro Hino (Tokyo) and Kotaro Kawahara (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide semiconductor device according to the present disclosure includes: an n-type drift layer on an n-type semiconductor substrate; p-type well regions in a surface layer of the drift layer; an n-type first separation region between the well regions; an n-type second separation region; an n-type source region in each of the well regions; a p-type c...