US Patent Issued to Mitsubishi Electric on June 23 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,700, issued on June 23, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device" was invented by Tsuyoshi Osaga (Tokyo), Yasuo Ata (Tokyo) and Yuki Hata (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "An IGBT region (2) and a diode region (3) are provided on a semiconductor substrate (1) and have an emitter electrode (16) on a surface of the semiconductor substrate (1). A sense IGBT region (4) is provided on the semiconductor substrate (1), has a smaller area than that of the IGBT region (2), and includes a sense emitter electrode (20) provided on the surface of the semiconductor substrate (1) and separated from the emitter el...